Product Summary
Product type: MOSFET
RoHS: detailed information
Transistor polarity: N-Channel
Drain / source breakdown voltage: 30 V
Gate source breakdown voltage: + / - 20 V
Drain the continuous current: 160 A
Resistance drain / source RDS (Guide): 0.0039 Ohms
Configuration: Single
Maximum working temperature: 175 + C
Mounting style: SMD/SMT
Package / box: TO-252AA
Package: Reel
Fall time: 42 NS
Minimum working temperature: - 55 C
Power dissipation of W: 160
Rise time: 83 NS
Factory packaging quantity: 2500
Typical delay time: 83 NS
Parametrics
Datasheets |
FDD8870, FDU8870 |
---|---|
Product Photos |
TO-263 |
Product Training Modules |
High Voltage Switches for Power Processing |
Standard Package | 2,500 |
Category | Discrete Semiconductor Products |
Family | FETs - Single |
Series | PowerTrench? |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 160A |
Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 118nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5160pF @ 15V |
Power - Max | 160W |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | D-Pak |
Packaging | Tape & Reel (TR) |
Dynamic Catalog | N-Channel Standard FETs |
Features
FDD8870
N-Channel PowerTrench? MOSFET
30V, 160A, 3.9mW
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDD8870 |
Fairchild Semiconductor |
MOSFET 30V N-Channel PowerTrench |
Data Sheet |
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FDD8870_F085 |
Fairchild Semiconductor |
MOSFET 30V NCH PwrTrench |
Data Sheet |
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