Product Summary
Product type: MOSFET
RoHS: detailed information
Transistor polarity: P-Channel
Drain / source breakdown voltage: - 20 V
Gate source breakdown voltage: + / - 12 V
Drain the continuous current: 1.5 A
Resistance drain / source RDS (Guide): 120 mOhms
Configuration: Single Quad Drain
Maximum working temperature: 150 + C
Mounting style: SMD/SMT
Package / box: SC-70-6
Package: Reel
Fall time: 12 NS
Positive transconductance gFS (maximum / minimum): 5 S
Minimum working temperature: - 55 C
Power dissipation of W: 0.75
Rise time: 12 NS
Factory packaging quantity: 3000
Typical delay time: 10 ns
Parametrics
FAIRCHILD SEMICONDUCTOR - FDG328P - P CHANNEL MOSFET, -20V, 1.5A, SC-70
Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):156mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV ;RoHS Compliant: Yes
Features
FDG328P
P-Channel 2.5V Specified PowerTrench? MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDG328P |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 2.5V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDG311N_Q |
Fairchild Semiconductor |
MOSFET SC70-6 N-CH 20V |
Data Sheet |
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FDG312P |
Fairchild Semiconductor |
MOSFET SC70-6 P-CH -20V |
Data Sheet |
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FDG313N |
Fairchild Semiconductor |
MOSFET SC70-6 N-CH 25V |
Data Sheet |
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FDG315N |
Fairchild Semiconductor |
MOSFET SC70-6 N-CH 30V |
Data Sheet |
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FDG318P |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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FDG326P |
Fairchild Semiconductor |
MOSFET SC70-6 P-CH -20V |
Data Sheet |
Negotiable |
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