Product Summary
Product type: MOSFET
RoHS: detailed information
Transistor polarity: P-Channel
Drain / source breakdown voltage: - 20 V
Gate source breakdown voltage: + / - 12 V
Drain the continuous current: 3.1 A
Resistance drain / source RDS (Guide): 0.06 Ohms
Configuration: Dual
Maximum working temperature: 150 + C
Mounting style: SMD/SMT
Package / box: MicroFET
Package: Reel
Fall time: 11 NS
Positive transconductance gFS (maximum / minimum - 11): S
Minimum working temperature: - 55 C
Power dissipation of W: 1.4
Rise time: 11 NS
Factory packaging quantity: 3000
Parametrics
MOSFET, DUAL, P, MLP6
Transistor Polarity:P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:-1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55C to +150C; Transistor Case Style:MicroFET; No. of Pins:8; Current Id Max:-3.1A; Current Temperature:25C; Full Power Rating Temperature:25C; Junction Temperature Tj Max:150C; Junction Temperature Tj Min:-55C; Package / Case:MLP-6; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:6A; SMD Marking:029; Termination Type:SMD; Voltage Vds:-20V; Voltage Vds Typ:-20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:-1.5V
Features
FDMA1029PZ
Dual P-Channel PowerTrench? MOSFET
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for its physic
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDMA1029PZ |
Fairchild Semiconductor |
MOSFET -20V Dual P-Channel PowerTrench MOSFET |
Data Sheet |
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