(China (Mainland))
Product Summary
FDN372S Series 30 V 40 mOhm N-Channel PowerTrench SyncFET - SSOT-3
Parametrics
Product Highlight
- Channel Type: N-Channel
- Drain-to-Source Voltage [Vdss]: 30 V
- Drain-Source On Resistance-Max: 40 mΩ
- Qg Gate Charge: 8.1 nC
- Rated Power Dissipation: 460 mW
Features
Features
? 2.6 A, 30 V. RDS(ON) = 40 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 4.5 V
? Low gate charge
? Fast switching speed
? High performance trench technology for extremely
low RDS(ON)
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDN372S |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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 |
FDN372S_Q |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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