Product Summary

Description Value
Package 6SuperSOT
Channel Mode Enhancement
Maximum Drain Source Voltage 60 V
Maximum Continuous Drain Current 4.3 A
RDS-on 55@10V mOhm
Maximum Gate Source Voltage ±20 V
Typical Turn-On Delay Time 11 ns
Typical Rise Time 8 ns
Typical Turn-Off Delay Time 19 ns
Typical Fall Time 6 ns
Operating Temperature -55 to 150 °C
Mounting Surface Mount
Category MOSFET
Manufacturer Fairchild Semicondu ctor

Parametrics

Manufacturer: Fairchild Semiconductor

Product type: MOSFET

RoHS: detailed information

Transistor polarity: N-Channel

Drain / source breakdown voltage: 60 V

Gate source breakdown voltage: + / - 20 V

Drain the continuous current: 4.3 A

Resistance drain / source RDS (Guide): 0.055 Ohms

Configuration: Single Quad Drain

Maximum working temperature: 150 + C

Mounting style: SMD/SMT

Package / box: SSOT-6

Package: Reel

Fall time: 8 ns

Positive transconductance gFS (maximum / minimum): 14 S

Minimum working temperature: - 55 C

Power dissipation of W: 1.6

Rise time: 8 ns

Factory packaging quantity: 3000

Typical delay time: 19 NS

Features

60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDC5612
FDC5612

Fairchild Semiconductor

MOSFET SSOT-6 N-CH 60V

Data Sheet

0-1: $0.54
1-25: $0.47
25-100: $0.36
100-250: $0.32
FDC5612_F095
FDC5612_F095

Fairchild Semiconductor

MOSFET 60V 4.3A N-CH POWERTRENCH

Data Sheet

Negotiable