Product Summary
Description | Value | ||
Package | 6SuperSOT | ||
Channel Mode | Enhancement | ||
Maximum Drain Source Voltage | 60 V | ||
Maximum Continuous Drain Current | 4.3 A | ||
RDS-on | 55@10V mOhm | ||
Maximum Gate Source Voltage | ±20 V | ||
Typical Turn-On Delay Time | 11 ns | ||
Typical Rise Time | 8 ns | ||
Typical Turn-Off Delay Time | 19 ns | ||
Typical Fall Time | 6 ns | ||
Operating Temperature | -55 to 150 °C | ||
Mounting | Surface Mount | ||
Category | MOSFET | ||
Manufacturer | Fairchild Semicondu ctor |
Parametrics
Product type: MOSFET
RoHS: detailed information
Transistor polarity: N-Channel
Drain / source breakdown voltage: 60 V
Gate source breakdown voltage: + / - 20 V
Drain the continuous current: 4.3 A
Resistance drain / source RDS (Guide): 0.055 Ohms
Configuration: Single Quad Drain
Maximum working temperature: 150 + C
Mounting style: SMD/SMT
Package / box: SSOT-6
Package: Reel
Fall time: 8 ns
Positive transconductance gFS (maximum / minimum): 14 S
Minimum working temperature: - 55 C
Power dissipation of W: 1.6
Rise time: 8 ns
Factory packaging quantity: 3000
Typical delay time: 19 NS
Features
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDC5612 |
Fairchild Semiconductor |
MOSFET SSOT-6 N-CH 60V |
Data Sheet |
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FDC5612_F095 |
Fairchild Semiconductor |
MOSFET 60V 4.3A N-CH POWERTRENCH |
Data Sheet |
Negotiable |
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