Product Summary

Manufacturer: Fairchild Semiconductor

Product type: MOSFET

RoHS: detailed information

Transistor polarity: N-Channel

Drain / source breakdown voltage: 150 V

Gate source breakdown voltage: + / - 20 V

Drain the continuous current: 21 A

Resistance drain / source RDS (Guide): 0.066 Ohms

Configuration: Single

Maximum working temperature: 175 + C

Mounting style: SMD/SMT

Package / box: TO-252AA

Package: Reel

Fall time: 19 NS

Minimum working temperature: - 55 C

Power dissipation of W: 95

Rise time: 19 NS

Factory packaging quantity: 2500

Typical delay time: 32 NS

Parametrics

Datasheets FDD2582
Product Photos TO-263
Product Training Modules High Voltage Switches for Power Processing
Standard Package 2,500
Category Discrete Semiconductor Products
Family FETs - Single
Series PowerTrench?
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25° C 21A
Rds On (Max) @ Id, Vgs 66 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 1295pF @ 25V
Power - Max 95W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252-3
Packaging Tape & Reel (TR)
Dynamic Catalog N-Channel Standard FETs

 

Features

FDD2582
N-Channel PowerTrench? MOSFET
150V, 21A, 66mΩ
Features
? rDS(ON) = 58mΩ (Typ.), VGS = 10V, ID = 7A
? Qg(tot) = 19nC (Typ.), VGS = 10V
? Low Miller Charge
? Low QRR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
Formerly developmental type 82855

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDD2582
FDD2582
Fairchild Semiconductor
MOSFET N-Ch PowerTrench
Data Sheet
0-1: $0.91
1-25: $0.80
25-100: $0.65
100-250: $0.56
FDD2582_Q
FDD2582_Q
Fairchild Semiconductor
MOSFET N-Ch PowerTrench
Data Sheet
Negotiable