(China (Mainland))
Product Summary
Product type: MOSFET
RoHS: detailed information
Transistor polarity: N-Channel
Drain / source breakdown voltage: 30 V
Gate source breakdown voltage: + / - 20 V
Drain the continuous current: 5 A
Resistance drain / source RDS (Guide): 0.035 Ohms
Configuration: Single Quad Drain
Maximum working temperature: 150 + C
Mounting style: SMD/SMT
Package / box: SSOT-6
Package: Reel
Fall time: 12 NS
Positive transconductance gFS (maximum / minimum): 6.2 S
Minimum working temperature: - 55 C
Power dissipation of W: 1.6
Rise time: 12 NS
Factory packaging quantity: 3000
Typical delay time: 13 NS
Parametrics
N CH MOSFET, 30V, 5A, SUPER SOT-6
Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Current Id Max:5A; Package / Case:SuperSOT-6; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V
Features
FDC653N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter FDC653N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a) 5 A
- Pulsed 15
PD Maximum Power Dissipation (Note 1a) 1.6 W
(Note 1b) 0.8
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
FDC653N Rev.C
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching, and low in-line
power loss are needed in a very small outline surface mount
package.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDC653N |
Fairchild Semiconductor |
MOSFET SSOT-6 N-CH 30V |
Data Sheet |
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|
FDC653N_F095 |
Fairchild Semiconductor |
MOSFET 30V 5A N-CH ENHANCEMENT MODE |
Data Sheet |
Negotiable |
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